Infineon Technologies has added a new power module with a ceramic substrate made of aluminum nitride (AIN) to its EasyDUAL CoolSiC MOSFET family.
The components are available in a half-bridge configuration with a forward resistance (R DS(on)) of 11 mΩ in an EasyDUAL-1B package and with 6 mΩ in a -2B package. The improved properties of the high-performance ceramics make the 1200 V modules suitable for high power density applications such as solar systems, uninterruptible power supplies, auxiliary power converters, energy storage systems and charging stations for electric vehicles.
The modules are equipped with the latest CoolSiC MOSFET technology, which has excellent gate oxide reliability. Due to the improved thermal conductivity of the DCB material, the thermal resistance to the heat sink (R thJH) can be reduced by up to 40 %. In combination with the CoolSiC Easy modules, the new AlN ceramic either improves the output power or lowers the junction temperatures. This means that an improved service life of the system can be achieved. The new modules are available immediately.
