GaN power stages reduce dimensions and power loss

GaN power stages reduce dimensions and power loss

Rohm offers the BM3G0xxMUV-LB series of EcoGAN brand power stage ICs with integrated 650V GaN HEMTs and gate drivers. They are suitable for primary power supplies in industrial and consumer applications such as data servers and AC adapters and offer additional functions and peripheral components to maximize GaN HEMT performance. The wide drive range (2.5 to 30 V) ensures compatibility with other controller ICs in primary power supplies and facilitates the replacement of existing silicon MOSFETs (super junction). At the same time, this makes it possible to reduce the dimensions and power dissipation by 99 % and 55 % respectively and thus achieve higher efficiency with a smaller size.

Image: RohmTheBM3G0xxMUV-LB series is optimized for primary power supplies (AC/DC, PFC circuits) in a variety of applications for consumers such as household appliances, AC adapters, PCs, TVs, refrigerators, air conditioners and in the industrial sector for servers and office automation equipment.

Rohm Semiconductor produces SiC diodes and MOSFETs, analog ICs such as gate drivers and power management ICs, power transistors and diodes as well as passive components in Japan, Germany, Korea, Malaysia, Thailand, the Philippines and China. Rohm Semiconductor Europe near Düsseldorf is responsible for the EMEA region.

  • Issue: Januar
  • Year: 2020
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