Gate driver protection for SiC MOSFETs in the automotive sector

TPSMB-Diodenserie im DO-214AA-Gehäuse

Littelfuse, headquartered in Chicago (Illinois, USA), has launched the TPSMB TVS diode series. According to the manufacturer, it is the first asymmetrical voltage spike suppression (TVS) diode series on the market specifically designed to protect SiC MOSFET gate drivers in automotive applications. It offers a compact single component solution that replaces multiple tens of diodes or TVS components traditionally used to protect gate drivers.

Symbol-Darstellung der asymmetrischen TPSMB-SerieSymbol representation of the asymmetric TPSMB seriesThediode series provides protection for SiC MOSFET gate drivers, which are more susceptible to overvoltage events due to their faster switching speeds compared to conventional MOSFETs or IGBTs. The asymmetrical design of the series supports the different positive and negative gate driver voltages of SiC MOSFETs, ensuring optimized matched performance in a variety of automotive power supply applications such as onboard chargers, EV traction inverters, I/O interfaces or VCC buses where SiC MOSFETs are used. The series is available in the space-saving DO-214AA package. The peak pulse power dissipation is up to 600 W with a waveform of 10 to 1000 µs. The AEC-Q101 (automotive grade) qualified diodes are available in quantities of 3,000 each on 13 inch reels.

  • Issue: Januar
  • Year: 2020
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