Infineon Technologies presents a new generation of 1200-V CoolSiC MOSFETs in a TO263-7 package for automotive applications. The silicon carbide (SiC) MOSFETs enable bidirectional charging and help reduce system costs in on-board charging (OBC) and DC-DC applications. The 1200 V variant of the CoolSiC family has 25% lower switching losses compared to the first generation. This enables higher switching frequencies, higher power density and smaller system sizes. With a gate-source threshold voltage (VGS(th)) of over 4 V and a very low ratio between feedback capacitance (Crss) and input capacitance (Ciss), this enables reliable switch-off at VGS = 0 V without parasitic switch-on processes. This allows unipolar control, which reduces system complexity and cost. In addition, the low switch-on resistance (RDS(on)) reduces line losses over the entire temperature range from -55 to 175 °C.
The XT design and connection technology leads to a significant improvement in thermal properties. By connecting to the cooling system, the junction temperature is reduced by 25 % compared to the first generation. In addition, the MOSFET has a creepage distance of 5.89 mm and thus fulfills the requirements for 800 V systems at package level without the need for additional coating steps in the application.
Infineon offers a wide range of RDS(on) variants, including the only 9 mΩ variant currently available on the market in a TO263-7 package.
