Infineon presents the new 650 V silicon carbide (SiC) CoolSiC MOSFETs in TO-leadless (TOLL) package. They are optimized for applications such as power supplies, servers, telecommunication infrastructures, energy storage systems and battery formation solutions. The trench-based MOSFETs are offered in a granular portfolio to cover different applications. They are supplied in JEDEC-qualified TOLL with low parasitic inductance. This allows a higher switching frequency with lower switching losses, good thermal management and automated assembly.
The CoolSiC MOSFETs 650 V offer reliability in harsh environments, for example for topologies with repeated hard commutation. The innovative .XT connection technology reduces thermal resistance (Rth) and thermal impedance (Zth). In addition, the new components have a gate threshold voltage (VGS(th)) of more than 4 V, which makes them robust against parasitic turn-on. They also contain a body diode and a strong gate oxide (GOX).
A switch-off voltage (VGS(off)) of 0 V is usually recommended to simplify control (unipolar control). The new portfolio supports a wide control interval of the VGS voltage in the range from -5 V (switch off) to 23 V (switch on). This enables compatibility with other SiC MOSFETs and standard MOSFET gate driver ICs. The new CoolSiC 650 V MOSFET in industrial-grade, discrete TOLL is available in various drain-source-on resistor (RDS(on)) options from 22 to 83 mΩ. 107 mΩ, 163 mΩ and 260 mΩ versions are available on request.
