NXP Semiconductors, a supplier of processors for the automotive industry, is collaborating with Taiwanese contract manufacturer TSMC to develop the industry's first embedded MRAM (Magnetic Random Access Memory) in 16nm FinFET technology. With the shift to software-defined vehicles (SDV), automakers need to support multiple generations of software upgrades on a single hardware platform. The combination of NXP's S32 processors with fast next-generation non-volatile memory provides a suitable hardware platform for this transition.
MRAM can update 20 MB of code in less than three seconds. Flash memory takes about one minute. This minimizes the downtime associated with updates and allows OEMs to avoid long module programming times. In addition, MRAM is a reliable technology for use in vehicles. TSMC's 16nm FinFET embedded MRAM memory technology offers a lifetime of one million cycles, support for reflow soldering and 20 years of data retention at 150°C. This exceeds the stringent requirements for automotive applications. The first prototypes have already been completed. Product samples are expected to be available in early 2025.
