Now in the RS range are the new MOSFETs from ON Semiconductor with a maximum drain-source voltage of 1200 V. Based on silicon carbide technology, these power semiconductors are significantly more powerful than equivalent silicon MOSFETs.
The N-channel SiC MOSFETs support accelerated switching speeds (with rise times as low as 10 ns). They feature turn-on resistance values of up to 20 mΩ and industry-leading gate charge values with minimal power losses. The components are exceptionally robust and can handle ultra-high current surge pulses. They have a dielectric breakdown field strength that is an order of magnitude greater than equivalent silicon MOSFETs. Their operating temperature range extends from -55 °C to + 175 °C.
The devices are supplied in compact TO247 packages and surface mount D2PAK. They are Pb-free, fully RoHS environmental compliant and 100% UIL approved. Main application fields include uninterruptible power supplies (UPS), electric vehicle charging stations, DC/DC converters, motor control systems and solar inverters. AEC qualified versions are available.
