Vishay Intertechnology presents a new model of its fourth generation of 600 V fast-body diode MOSFETs of the EF series. The new n-channel MOSFET SiHH070N60EF offers 29% lower on-resistance and 60% lower gate charge compared to the previous generation. Its high energy efficiency makes it ideal for power supply applications in the telecommunications, industrial and computer sectors.
Of all comparable products on the market, this MOSFET offers the smallest gate charge to on-resistance product - an important parameter for voltage converter applications. This makes the device a response to the increasing demands for energy efficiency and power density in the first two stages of power converter architecture - bridgeless totem-pole power factor correction (PFC) and 'soft' switching DC/DC converter topologies.
The new MOSFET in the PowerPAK-8x8 housing is RoHS-compliant and halogen-free. Limit values are guaranteed for overvoltage resistance in avalanche mode, and the component is 100% UIS-tested for compliance with this specification. It is available immediately in sample and production quantities with a delivery time of ten weeks.
