Infineon's CoolSiC MOSFETs use an optimized trench semiconductor process that enables lowest losses in the application with highest reliability in operation. These MOSFETs in voltage classes 1700, 1200 and 650 V and with on-state resistances from 27 to 1000 mΩ are designed for applications such as photovoltaic inverters, battery charging, energy storage, motor drives, UPS, auxiliary power supplies and SMPS circuits.
The discrete packaged MOSFETs are suitable for power factor correction (PFC) circuits, bidirectional topologies and DC-DC converters or DC-AC inverters. They offer excellent immunity to unwanted parasitic turn-on effects and low dynamic losses, even at zero volt turn-off voltage in bridge topologies. CoolSiC Trench technology enables a flexible set of parameters that can be used to implement application-specific features in the respective product portfolio:
- The 650-V CoolSiC MOSFETs offer optimized switching behavior at high currents and low capacitances. They are designed for industrial applications such as servers, telecommunications and motor drives.
- The 1200-V MOSFET range is suitable for industrial and automotive applications such as on-board chargers/PFC, auxiliary inverters and uninterruptible power supplies (UPS).
- The flyback typology characterizes the 1700 V-
variant, which makes it ideal for use in energy storage systems, for fast charging of electric vehicles, for power management (SMPS) and for solutions for solar energy systems.
