The Dutch chip manufacturer Nexperia presented its first power GaN FETs in E-mode configuration (enhancement mode) for low-voltage (100/150 V) and high-voltage applications (650 V) at the beginning of May. The expansion of the cascode range by seven new E-mode components now offers a selection of GaN FETs in addition to the extensive portfolio of silicon-based power electronics components.
The new range includes five 650 V E-mode GaN FETs with RDS(on) between 80 and 190 mΩ in 5 x 6 mm and 8 x 8 mm DFN packages. They optimize the efficiency of power conversion in high and low voltage applications for data transmission and telecommunications, consumer applications, solar systems, DC and servo motors for precision with higher torque and more power.
Nexperia now also offers a 100 V GaN FET (3.2 mΩ) in the WLCSP8 package and a 150 V device (7 mΩ) in the FCLGA. They are suitable for low voltage, high power applications such as efficient DC-DC conversion in data centers, fast charging (e-mobility and USB-C), small LiDAR transceivers, low noise class D audio amplifiers and higher power density devices such as cell phones, laptops and game consoles.The switching performance of Nexperia's E-mode GaN FETs is due to very low Qg and QOSS values, while their low RDS(on) enables power efficient designs.
With the new product versions, Nexperia thus offers a wide range of GaN FETs for a variety of power applications. The E-mode GaN FETs are manufactured on an 8-inch wafer line to increase capacitance. They are qualified for industrial applications according to the JEDEC standard. Nexperia is a global semiconductor company headquartered in the Netherlands. Its products are recognized as the benchmark for efficiency in terms of manufacturing, size, power consumption and performance, with certification to IATF 16949, ISO 9001, ISO 14001 and ISO 45001.
