Rohm Semiconductor has started series production of the 650-V GaN (gallium nitride) HEMTs GNP1070TC-Z and GNP1150TCA-Z. They were developed with Ancora Semiconductors, a subsidiary of Delta Electronics. They offer increased efficiency and miniaturization in power supply systems, including servers and power supplies.
After starting volume production of 150-V GaN HEMTs with 8 V gate breakdown voltage in 2022, Rohm introduced a control IC technology to maximize performance in March 2023. Now Rohm has developed 650V GaN HEMTs that contribute to higher efficiency and increased miniaturization of power supply systems. GNP1070TC-Z and GNP1150TCA-Z offer performance for RDS(ON) × Ciss / RDS(ON) × Coss (index for evaluating switching performance, where Ciss refers to the total capacitance on the input side and Coss refers to the output side). At the same time, an integrated ESD (electrostatic discharge) protection element improves the dielectric strength to 3.5 kV. This increases the reliability of the applications. The switching characteristics of GaN HEMTs also contribute to the miniaturization of peripheral components.
Rohm improves device performance with its EcoGaN series of GaN devices that contribute to energy saving and miniaturization. EcoGaN refers to the new product line of GaN devices that further reduce the low on-resistance and maximize the high-speed switching characteristics of GaN.
