Nexperia is now adding GaN cascode switches to its GaN FET devices based on high-voltage GaN HEMT technology and available in a proprietary copper clip CCPAK package.
The gallium nitride FET GAN039-650NTB for 650V with an on-resistance of only 33mΩ (typ.) at 25°C in the CCPAK1212i package now offers FET switch function with a wide bandgap in a thermally efficient copper clip package.
According to the manufacturer, this technology scores particularly well in renewable energy applications, such as solar systems and heat pumps for residential buildings, as well as in a wide range of industrial applications such as servo drives, switching power supplies, servers and telecommunications.
The surface mount CCPAK package utilizes Nexperia's copper clip package technology to replace internal bond wires. This reduces parasitic losses, improves electrical and thermal performance and increases component reliability. The CCPAK GaN FETs are available with a choice of top or bottom side heat dissipation area, providing an additional degree of freedom for circuit design. According to the manufacturer, the cascode configuration of the GAN039-650NTB enables very good switching and passband performance with a robust gate that offers high signal-to-noise ratios. This feature also simplifies application designs by eliminating the need for complex gate drivers and control circuitry.
Nexperia is launching its CCPAK portfolio with the topside-cooled 33mΩ (typ.), 650 V GAN039-650NTB. The GAN039-650NBB variant with bottom-side cooling will have the same RDS(on) value.
