The latest generation of DDR4 DRAM modules from ATP Electronics for enterprise and industrial applications enables an increase in the maximum clock frequency with a data transfer rate of up to 3200 MT/s (megatransfers or106 transfers per second). They are available with capacities from 4 to 128 GB. The supply voltage is 1.2 V. High performance with lower power consumption enables applications in telecommunications infrastructures, network storage, network-attached storage (NAS) servers, micro/cloud servers and embedded systems such as industrial PCs. The modules of the former DDR3 series combine a transfer rate of up to 1866 MT/s with supply voltages of 1.5 and 1.35 V.
An application-compliant coating film is available as an optional extra to protect the modules against dust, moisture, corrosion, chemicals and extreme temperatures. Anti-sulphur resistors ward off the effects of sulphur contamination. A gold finger coating with a thickness of 30 µm and the circuit board with six to ten layers of PCBA assemblies ensure the mechanical reliability and durability of the modules. For industrial applications, an optional temperature resistance of -40 to 95 °C is also available. These DRAM modules are usually installed in high-performance environments such as data centers and in locations that are difficult to access. Here, uninterrupted data processing is essential. ATP Electronics is a leading supplier of high-performance, high-quality NAND flash and DRAM memory modules.
