A new Innoscience R&D center is being built in Leuven, Belgium. Under the direction of Dr. Jan Šonský, technologies in the field of GaN device technology (gallium-nitride-on-silicon) are to be developed here. The declared goal: Innoscience wants to remain at the forefront of future GaN-based technology innovations.
Dr. Šonský will lead the Löwen center in close cooperation with the R&D team at Innoscience Technology's headquarters in Suzhou (China). He has over 20 years of experience in research and development in the semiconductor industry, having previously driven both GaN and silicon technology developments for mobile and automotive applications for another semiconductor company and is highly respected in the industry.
Dr. Denis Marcon, Managing Director of Innoscience Europe, has high expectations for the new team led by Dr. Šonský: "Our devices already deliver excellent performance at both low voltages (30 V to 150 V) and high voltages (650 V). We expect that the new R&D center will offer even better performance, smaller size and highest reliability."
"Innoscience is 100% committed to gallium nitride," added Dr. Šonský. "I see a wonderful opportunity to advance our next-generation technology and enable power electronics designers worldwide and in various markets to benefit from its high performance."
