STMicroelectronics (ST), European manufacturer of semiconductor devices and integrated circuits (ICs), announces the construction of a new 200mm silicon carbide manufacturing facility for power devices and modules as well as for test and packaging purposes in Catania, Italy. The establishment of the new silicon carbide campus will support customers for SiC devices in the automotive, industrial and cloud infrastructure sectors.
As the center of ST's global SiC ecosystem, the campus integrates all steps of production. This will enable mass production of 200 mm SiC wafers for the first time in Europe, using 200 mm technologies in every process step - substrate, epitaxy, front-end and back-end. The new plant is scheduled to go into operation in 2026. The total investment is expected to be around €5 billion, with the Italian government providing around €2 billion as part of the EU chip law.
Catania has long been an important innovation hub for ST, as it is home to the largest SiC research and manufacturing facilities, which have contributed to the development of new solutions for the production of SiC devices. In the field of power electronics, including the collaboration between ST and the University of Catania and the CNR (Italian National Research Council), as well as a large network of suppliers, this investment will strengthen Catania's role as a global center of excellence for SiC technology and for further growth opportunities.
ST currently also manufactures its SiC products in Ang Mo Kio, Singapore, and in a joint venture with 'Sanan Optoelectronics' in Chongqing, China. The assembly and testing of ST's silicon carbide products is carried out at the chip assembly test facilities in Bouskoura, Morocco, and Shenzhen, China.
